Ultra Shallow Junction and Super Steep Halo Formation Using Carbon Co-implantation for 65nm High Performance CMOS Devices

In this paper, we report the effects of carbon co-implantation for the reduction of transient enhanced diffusion (TED) of both p-type SD-extension and halo dopants using a conventional spike annealing process. By optimizing implantation conditions, p-type USJ for pMOSFETs and an extremely steep halo profile for nMOSFETs are successfully obtained for the suppression of SCE without drive current degradation