Self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb-doped SrTiO3 p–n junctions

Position-sensitive detectors based on the lateral photovoltaic effect have been widely used in optical engineering for the measurement of position, distance, and angles. However, self-powered ultraviolet position-sensitive detectors with high sensitivity and fast response are still lacking due to the difficulty associated with the fabrication of p-type wide bandgap semiconductors, which hinders their further design and enhancement. Here, the influence of band structures and interfacial transport properties on the performance of self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb:SrTiO3p–n junctions is systematically investigated. Large position sensitivity and fast relaxation time of the lateral photovoltaic effect were observed up to 400 K in the perovskite-based ultraviolet position-sensitive detectors. Hall effect measurements revealed that the transport of photoexcited carriers occurs mainly through the interface of the PrNiO3/Nb:SrTiO3 junctions, resulting in a fast response and a stable photovoltaic effect. This study presents insights and avenues for designing self-powered perovskite oxide ultraviolet position-sensitive detectors with enhanced photoelectric performance.