Wideband chaos generation based on integrated mutual coupling laser

To further enhance the bandwidth of an integrated chaotic semiconductor laser, a structure of an integrated mutual coupling laser is proposed. The laser integrates two distributed feedback lasers and two semiconductor optical amplifiers in the middle of the lasers. The dynamic state of the integrated laser undergoes complex changes with the variation of the bias currents of the distributed feedback (DFB) lasers and semiconductor optical amplifiers (SOAs). We find that the bias currents have an influence on the enhancement of chaotic signal bandwidth. The proposed structure can generate over 30 GHz ultra-wide chaotic laser when the DFB and SOA regions are under proper bias current conditions.