Removal of Interlayer Water of two Ti3C2Tx MXenes as a Versatile Tool for Controlling the Fermi‐Level Pinning‐Free Schottky Diodes with Nb:SrTiO3

Abstract Striving for the sixth‐generation communication technology discovery, semiconductors beyond Si with wider bandgaps as well as non‐conventional metals are actively being sought to achieve high speeds whilst maintaining devices miniaturization. 2D materials may provide the potential for downsizing, but their functional advantage over existing counterparts still longs to be discovered. Along that path, surface‐adsorbed or bulk‐intercalated water molecules remaining after wet‐chemical synthesis of 2D materials are generally seen as obstacles to high‐performance achievement. Herein, the control of such water within the interlayers of solution‐processed metallic 2D titanium carbide (MXene) by vacuum annealing duration is demonstrated. Moreover, the impact of water removal on work function (WF) and functional terminations is unveiled for the first time. Furthermore, the usefulness of such water for controlling a novel Schottky diode in contact with an n‐type oxide semiconductor, niobium‐doped strontium titanate (Nb:SrTiO 3 ) is observed. The advantage of MXene compared to conventional gold as facile processing, WF tunability, and lower turn‐on voltage in the Schottky anode application is highlighted. This fundamental study shows the way for a novel Schottky diode preparation in atmospheric conditions and provides implications for further research directions aiming at commercialization.