材料科学
电介质
合金
热导率
金属
热的
电导
冶金
复合材料
凝聚态物理
热力学
光电子学
物理
作者
Yingqi Wang,Yu Yang,Zhuo Ju,Zehao Yu,Hui Guo,Meilin Li,Dengke Ma,Lifa Zhang,Yunshan Zhao
摘要
As the size of transistors in electronic devices continues to shrink and power density increases, the effective thermal management has become essential. The interfacial thermal resistance now represents a key bottleneck in further miniaturizing and powering high-performance electronic products. In this study, we used the differential 3ω method to investigate the effects of different metal interlayers on the interfacial thermal conductance of the Cr0.22Ni0.78/Al2O3 interface. Specifically, a Cu interlayer of 17 nm or a Cr interlayer of 5 nm doubled the interfacial thermal conductance (ITC) compared to that of the pure Cr0.22Ni0.78/Al2O3 interface. In contrast, the Au interlayer reduces the ITC of the Cr0.22Ni0.78/Al2O3 interface. Furthermore, the phonon spectral analysis revealed that the Cu or Cr interlayer acts as a phonon bridge, alleviating the phonon mismatch between the Cr0.22Ni0.78 and Al2O3 layers. This study advances the understanding of the interlayer effects on the ITC of Cr0.22Ni0.78/Al2O3 interface and provides valuable guidance for improving the ITC between metal and dielectric materials in electronic applications.
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