Pressureless Silver Sintering Die-Attach for SiC Power Devices

Silicon carbide power devices are extremely attractive for high temperature applications. Many converters, based on SiC power devices, have been demonstrated to operate at ambient temperatures ranging from 200°C to 400°C. However, the power devices themselves are no longer the only limiting factor for the increase in operating temperature. Their packaging has become the main stumbling block for high-temperature, reliable operation. Different degradation phenomenon can be observed: fracture of the package during large thermal cycling (due to mismatch in the Coefficient of Thermal Expansion of the various materials), diffusion of chemical species, phase change...