异质结
材料科学
接口(物质)
光电子学
光电效应
纳米材料
纳米技术
半导体
紫外线
氧化物
质量(理念)
计算机科学
表征(材料科学)
宽禁带半导体
薄膜
作者
Haoran Feng,Heyuan Zheng,Kaixi Shi,Jinhua Li,Zhenfeng Jiang,Yani Li,Xinzhuo He
出处
期刊:Langmuir
[American Chemical Society]
日期:2026-09-10
标识
DOI:10.1021/acs.langmuir.6c03484
摘要
Abstract Zinc oxide (ZnO), as a wide-band-gap semiconductor, exhibits significant potential for applications in ultraviolet (UV) optoelectronic devices. Constructing low-dimensional hybrid heterojunctions with other semiconductor materials can effectively facilitate photocarrier separation and broaden the spectral range of the photoresponse. However, a key challenge for high-performance optoelectronic devices is the optimization of the interface quality of heterojunctions. Therefore, it is crucial to deeply reveal the intrinsic mechanisms to regulate the interface quality and develop feasible strategies to improve the photoelectric conversion efficiency of heterojunction devices. In this review, we summarize recent advancements in interface engineering strategies and their applications for ZnO-based low-dimensional hybrid heterojunctions. First, we introduce synthesis methods for low-dimensional ZnO nanomaterials and their heterojunctions along with an analysis of typical interfacial issues. Next, the impact of interface engineering strategies on optoelectronic performance is discussed in depth, addressing both the technical implementation and the underlying physical mechanism. Finally, the application of ZnO-based heterojunction devices is explored, including optical communication, imaging, flexible devices, and other optoelectronic device fields. This review provides a comprehensive guideline for the rational design and development of high-performance ZnO-based optoelectronic devices.
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