NiO/Ga2O3 Heterojunction with Tunable Oxygen Vacancies for Efficient Self-Powered Solar-Blind UV Detection

Solar-blind ultraviolet (UV) photodetectors based on wide-bandgap oxide semiconductors are highly desirable for environmental monitoring, flame sensing, and secure optical communication. Among them, Ga2O3 has attracted extensive attention due to its ultra-wide bandgap and intrinsic solar-blind response; however, its high dark current, weak built-in electric field, and defect-induced instability remain critical challenges, particularly for amorphous films prepared by scalable sputtering processes. Herein, a self-powered solar-blind UV photodetector based on a NiO/Ga2O3 heterojunction is demonstrated, in which the oxygen-vacancy concentration and band structure of sputtered Ga2O3 are systematically regulated by tailoring the Ar/O2 sputtering atmosphere. Combined X-ray photoelectron spectroscopy, UV photoelectron spectroscopy, and optical measurements reveal that the variation in oxygen-vacancy concentration simultaneously modulates the Fermi-level position, band-edge alignment, and built-in potential at the NiO/Ga2O3 interface. As a result, the optimized heterojunction device exhibits a low dark current, pronounced rectifying behavior, and efficient carrier separation under zero bias, enabling self-powered operation. The photodetector delivers a responsivity of 47 mA W−1, a detectivity of 7.52 × 1011 Jones, and a high rejection ratio exceeding 104 between 254 and 365 nm. Furthermore, stable and high-contrast UV imaging is successfully demonstrated, highlighting the practical applicability of the device. This work provides an effective methodology for modulating defects and band structure in high-performance solar-blind UV photodetectors based on sputtered wide-bandgap oxide heterojunctions.