太赫兹辐射
材料科学
光电导性
光电子学
光探测
光激发
响应度
异质结
紫外线
半导体
光电探测器
激发
物理
量子力学
作者
Suping Ma,Guanghao Li,Zhuo Li,Tingyuan Wang,Yawen Zhang,Ningning Li,Haisheng Chen,Nan Zhang,Weiwei Liu,Yi Huang
标识
DOI:10.1002/adma.202305709
摘要
Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for comprehensively grasping their intrinsic properties and broadening future application fields. Here, through a specially designed Fe3 GeTe2 /O-Fe3 GeTe2 heterostructure, first, the broad-spectrum negative photoconductivity phenomenon of ferromagnetic nodal line semimetal Fe3 GeTe2 is reported that covers UV-vis-infrared-terahertz bands (355 nm to 3000 µm), promising to compensate for the inadequacies of traditional optoelectronic devices. The significant suppression of photoexcitation conductivity is revealed to arise from the semimetal/oxidation (sMO) interface-assisted dual-response mechanism, in which the electron excitation origins from the semiconductor photoconductivity effect in high-energy photon region, and semimetal topological band-transition in low-energy photon region. High responsivities ranging from 103 to 100 mA W-1 are acquired within ultraviolet-terahertz bands under ±0.1 V bias voltage at room temperature. Notably, the responsivity of 2.572 A W-1 at 3000 µm (0.1 THz) and the low noise equivalent power of 26 pW Hz-1/2 surpass most state-of-the-art mainstream terahertz detectors. This research provides a new perspective for revealing the photoelectric conversion properties of Fe3 GeTe2 crystal and paves the way for the development of spin-optoelectronic devices.
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