Fabrication of Flexible Amorphous Gallium Oxide Solar‐Blind Ultraviolet Photodetector by Inkjet Printing

This study explores the fabrication of flexible amorphous gallium oxide (a‐Ga 2 O 3 ) solar‐blind ultraviolet photodetector using a facile inkjet‐printing technology. Various characterization techniques are employed to examine the impact of annealing temperature on the properties of the a‐Ga 2 O 3 layer and photodetector. The results indicate the growth of the amorphous gallium oxide devoid of crystalline diffraction peaks. When the annealing temperature increases from 350 °C to 550 °C, a significant reduction in the concentration of oxygen vacancy and bandtail states within a‐Ga 2 O 3 is observed. Concurrently, the bandgap of a‐Ga 2 O 3 widens, and the radiation recombination is suppressed. The fabricated flexible photodetectors demonstrate responsiveness to solar‐blind ultraviolet light. As the annealing temperature of a‐Ga 2 O 3 rises, the photodetectors exhibit reduced dark current and improved photo‐to‐dark current ratio, responsivity, detectivity, and rejection ratio. A current pulse phenomenon appears in the time‐dependent photoresponse curves. This study reveals the feasibility and effectiveness of the inkjet‐printing method for preparing amorphous gallium oxide ultraviolet photodetectors.