X射线光电子能谱
蚀刻(微加工)
干法蚀刻
等离子体
表面粗糙度
分析化学(期刊)
材料科学
反应离子刻蚀
等离子体刻蚀
氧化物
图层(电子)
表面光洁度
化学
纳米技术
化学工程
复合材料
冶金
物理
量子力学
色谱法
工程类
作者
Chien-Wei Chen,Wen-Hao Cho,Chan-Yuen Chang,Cheng‐Kuan Su,Nien-Nan Chu,Chi-Chung Kei,Bor‐Ran Li
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2022-12-30
卷期号:41 (1)
被引量:2
摘要
Plasma-based Al2O3 atomic layer etching (pALE) has a reaction mechanism similar to thermal Al2O3 ALE (tALE). The main difference between the two methods is that pALE uses plasma instead of HF in tALE to fluorinate Al2O3 to AlF3. In this study, the CF4 plasma source commonly used for dry etching is combined with a self-developed low-ion-bombardment remote Al2O3 plasma-based ALE system to obtain Al2O3 plasma fluorination conditions, and then the AlCl(CH3)2 (dimethylaluminum chloride) precursor is used to develop the pALE Al2O3 process. In addition to using x-ray photoelectron spectroscopy to investigate ideal fluorination conditions of CF4 plasma for Al2O3 films and establishing the linear etching rate curves of pALE at different process temperatures (250–400 °C), we used atomic force microscopy to analyze the surface morphology of the Al2O3 films after dry etching and pALE. We showed that pALE can smooth Al2O3 films with a root mean square surface roughness of 1.396–0.655 nm and used anodic aluminum oxide substrates with nanotrench structures to demonstrate that pALE can improve the surface roughness of nonplanar structures.
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