宽带
硅光子学
材料科学
光子学
光电子学
硅
极化(电化学)
光学
光纤
GSM演进的增强数据速率
电信
物理
计算机科学
化学
物理化学
作者
Bradley Snyder,Guy Lepage,Sadhishkumar Balakrishnan,Peter De Heyn,Peter Verheyen,P. Absil,Joris Van Campenhout
标识
DOI:10.1109/icsj.2017.8240087
摘要
We have designed, fabricated and tested edge couplers for silicon photonics targeting industry-standard SMF-28 fibers. These edge couplers are based on a SiN inverse taper fabricated on a silicon-on-insulator (SOI) platform combined with an etch-based substrate removal process that prevents leakage of the expanded mode to the underlying silicon substrate. The measured couplers exhibited a 0.5 dB bandwidth exceeding 100 nm, polarization dependent loss (PDL) of less than 0.5 dB and coupling efficiency of approximately −3 dB in O-band. Similarly, a 1 dB bandwidth exceeding 100 nm, PDL less than 1 dB and coupling efficiencies of −3 dB and better than −4 dB for TE and TM modes respectively were demonstrated across the C- and L-bands.
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