Modeling of N/sub 2//H/sub 2/ plasma for low-K material etching in a capacitively coupled plasma device

Summary form only given, as follows. In this research, we present the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with H/sub 2//N/sub 2/ gas mixture which includes neutral-species transport model, based on the relaxation continuum (RCT) model. Not only the plasma transport and spatial distribution, but also those of neutral gas are important issue for the etching process.