Electrical characterization of SrBi2Ta2O9 thin films for ferroelectric non-volatile memory applications

Ferroelectric SiBi2Ta2O9 capacitors with Pt electrodes were measured to have a non-volatile polarization of 6.6 μC/cm2 using 3 V pulse polarization measurements, a leakage current of less than 3×10−9 A/cm2 at 3 V, and a breakdown of voltage greater than 20 V. The temperature dependence of hysteresis loops were measured to 200 °C and both the non-volatile polarization and coercive field were observed to decrease with temperature. Process damage caused by CVD of overlying dielectrics and contact window plasma etching was reversed by oxygen annealing. Good resistance against both fatigue and imprint were observed.