压阻效应
电阻随机存取存储器
纳米-
计算机科学
能量(信号处理)
微电子机械系统
工作(物理)
比例(比率)
材料科学
电气工程
纳米技术
电子工程
光电子学
机械工程
工程类
物理
电压
复合材料
量子力学
作者
Miquel López-Suárez,Francesco Cottone,I. Neri
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2022-07-11
卷期号:12 (7): 968-968
标识
DOI:10.3390/cryst12070968
摘要
In this work we present piezoresistive memory-bits based on two-dimensional nano-scale electro-mechanical systems. We demonstrate it is possible to achieve different electrical responses by fine control of micro-structural asymmetries and that information can be encoded in the geometrical configuration of the device and read as in classical ReRAM memories by measuring the current flowing across it. Based on the potential energy landscape of the device, we estimate the energy cost to operate the proposed memories. The estimated energy requirements for a single bit compete with existing technologies.
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