Etching methods for texturing industrial multi-crystalline silicon wafers: A comprehensive review

Surface texturing for suppressing the reflection losses is the first and foremost step in the solar cell fabrication process. Over the years, multi-crystalline silicon (mc-Si) wafer solar cells dominated the PV market due to their cost-effectiveness. This article reviews various etching methods reported for texturing mc-Si wafers under the light of basic reaction mechanism, general composition of chemicals used, merits, drawbacks, and the progress made towards their commercialization. The article starts with introducing the alkaline etching process used in initial days of mc-Si solar cell production along with its process limitations. Subsequently, evolution of acid texturing process to address the challenges associated with alkaline etching and its journey as an established industrial process are discussed. Thereafter, progressive but expensive texturing methods such as reactive ion etching, laser etching, mechanical grooving and colloidal lithography are also reviewed. Later, the challenges imposed by introduction of diamond wire sawn (DWS) mc-Si wafers on established acid texturing process are presented. Further, remarkable approaches reported towards the effective texturing of DWS mc-Si wafers are discussed. Finally, a summary of reaction chemistry, recent process advances and future roadmap of proposed next-generation texturing scheme known as metal assisted chemical etching is being compiled and presented.