自旋电子学
磁性
磁矩
密度泛函理论
兴奋剂
Atom(片上系统)
铁磁性
材料科学
凝聚态物理
作者
M. Torrichi,N. Ziani,M. Belmekki
出处
期刊:Spin
[World Scientific]
日期:2022-02-11
卷期号:12 (01)
被引量:2
标识
DOI:10.1142/s2010324721500272
摘要
In this work, we studied doping of pure hafnium disulfide (HfS 2 ) by nonmagnetic atoms C and N. This doping was carried out by the substitution of a host atom S by doping atom C or N. The purpose of this work is to search new half-metallic material for the field of spintronics. This theoretical study is based on density functional theory (DFT) and GGA-PBE approximation. Our calculation revealed that the HfS 2 binary material doping with carbon and nitrogen induces strong magnetism and predicts new doped materials HfS 2 -C and HfS 2 -N. Their magnetic moments are respectively 2[Formula: see text] and 1[Formula: see text]. The host atoms Hf and the doping atoms induce a strong magnetic moment, while the host atoms S introduce a weak magnetic moment. This magnetism results fundamentally from the coupling between the Hf-5d states and the X-2p states (X = C and N). These two new materials will be promising for the spintronic domain.
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