场效应晶体管
半金属
砷化镓
晶体管
Dirac(视频压缩格式)
数码产品
材料科学
光电子学
砷化物
领域(数学)
凝聚态物理
工程物理
物理
电气工程
工程类
电压
量子力学
带隙
中微子
数学
纯数学
作者
Omor Shoron,Timo Schumann,Manik Goyal,David Kealhofer,Susanne Stemmer
摘要
Cadmium arsenide (Cd3As2) is a three-dimensional Dirac semimetal with many unique electronic properties that are of interest for future device applications. Here, we demonstrate field effect transistors using Cd3As2 as the channel material. We show that current densities exceed 5 A/mm and that very low contact resistances can be achieved even in unoptimized device structures. These properties make Cd3As2 of great interest for future high-speed electronics. We report on the current modulation characteristics of field effect transistors as a function of temperature. At low temperatures, the modulation exceeds 70%. We discuss material and device engineering approaches that can improve the device performance at room temperature.
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