材料科学
基质(水族馆)
蚀刻(微加工)
光电子学
过程(计算)
钥匙(锁)
纳米技术
电子工程
计算机科学
过程集成
硅
各向同性腐蚀
作者
Sungmin Lee,Boseong Son,Huijin Kim,Daegang Kim,Wang Yeop Lee,Si‐Hyun Park
标识
DOI:10.1002/sdtp.70001_129
摘要
We propose a wafer‐scale Hybrid 3D Integration to overcome conventional pick‐and‐place bottlenecks. The process enables simultaneous Si substrate removal and flip‐chip bonding, utilizing optimized TMAH etching and Ag‐In bonding. We verified the key process, including high‐performance IGZO TFTs and Micro‐LEDs. Establishing geometric design rules ensures high‐yield release, offering a viable pathway for high‐resolution displays.
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