The Influence of Short-Type Heaters and Their Positions on the Oxygen Concentration in the Growth of 300 mm Single Crystal Silicon by the Czochralski Method

The inevitable introduction of oxygen into Czochralski-method-grown single crystal silicon, facilitated by the use of quartz crucibles, can result in the failure of chips and devices. Both the size and position of the heater exert a significant influence on the oxygen concentration within the Czochralski-method-grown silicon. In this study, a novel short-type heater was designed and evaluated for its effect on melt temperature and oxygen diffusion during crystal growth. The silicon melt temperatures and oxygen diffusion coefficients in an MCZ furnace for several heater settings were simulated, and the results were implemented in experiments. From the examination of the growth process through computation, the heater and its positional adjustments were determined to be effective modulators of oxygen concentration during crystal growth, which was consequently reduced to below 4 ppma (ASTM F121-83). Finally, the simulations were validated experimentally, limitations in production were discussed, and possible improvements were outlined.