过驱动电压
阈值电压
电压
排水诱导屏障降低
材料科学
反向短通道效应
光电子学
晶体管
电气工程
物理
工程类
作者
Angshumala Talukdar,Kaushik Chandra Deva Sarma
标识
DOI:10.1166/jno.2022.3175
摘要
Threshold Voltage and Flat band Voltage model of Normally on JLFET is presented in this paper. The threshold voltage is the value of the gate to source voltages at which the depletion width equals to the thickness of the channel. For a normally on JLFET ideally, no current flows above the threshold voltages. Flat band voltage is the value of the gate voltage at which channel is completely neutral. In other word the thickness of depletion layer and accumulation layer is zero at flat band voltage. The model is based on the minimum central and surface potential of the device. The Threshold voltage is determined from the minimum central potential and the flat band voltage is determined by the minimum surface potential. The two models are validated by comparing them with results obtain from TCAD.
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