The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

In this paper we have developed a SALICIDE process for CMOS applications using ion beam mixing for silicide formation and doped silicide in conjunction with RTA drive‐in for shallow silicided junction formation, and have investigated the fundamental issues related to this process. Specifically, we have studied ( i ) the effects of ion beam mixing and RTA on the properties of Ti SALICIDE and the interaction between Ti and SiO 2 ; ( ii ) the self‐aligned TiN x O y / TiSi 2 formation and phase transformation; ( iii ) the mechanism of impurity redistribution and segregation, and junction formation during RTA drive‐in; and ( iv ) the performances and reliability of fabricated SALICIDE devices. Results show that this process may have a great impact on future VLSI technology.