Broadband photoresponse based on a Te/CuInP 2 S 6 ferroelectric field-effect transistor

A Te ferroelectric FET photodetector (637 nm–10.6 μm) achieves uncooled mid-IR detection ( R = 10.2 A W −1 , NEP=2.3 pWHz −1/2 ), enabling high-speed broadband photodetection.