14‐1: A Study on Flexibility Improvement of AMOLED Back Plane and Mask Reduction Process Architecture Using Photo‐sensitive Organic Insulation Films

In this work, the method of patterning inter‐layer deposition (ILD) and passivation layer (PVX) of the AMOLED back plane structure with an organic film was studied. By replacing the inorganic film of SiNx + SiO 2 with an organic film Poly‐imide, back plane suitable for flexible AMOLED was secured. It was possible to secure equivalent TFT transfer characteristics of device compared to inorganic inter layer structure by applying low‐temperature buffer and 2nd gate insulator SiNx to the organic inter layer TFT device. Also, VIA + passivation layer 2 mask photo process was replaced with 1 mask photo process using a VIA Half‐tone mask. Both processes were able to secure a process architecture that can be applied to flexible and rollable displays in the future by using photo‐sensitive organic insulation films.