Improved performances of Ge2Sb2Te5based phase change memory by W doping

W-doped Ge 2 Sb 2 Te 5 materials have been investigated for phase change memory applications. W 0.08 (Ge 2 Sb 2 Te 5 ) 0.92 phase change film exhibits a higher crystallization temperature (255 °C), better data retention of 10 years at 183 °C, and higher crystalline resistance compared with traditional Ge 2 Sb 2 Te 5 . The W x (Ge 2 Sb 2 Te 5 ) 1− x films crystallize into a stable face-centered cubic phase with uniform crystal grains. Phase-change memory device based on W 0.08 (Ge 2 Sb 2 Te 5 ) 0.92 shows short operation time (10 ns) and good endurance (6 × 10 5 cycles). W x (Ge 2 Sb 2 Te 5 ) 1− x material is a promising candidate for phase-change memory applications that require good data retention and fast operation speed.