弗伦克尔缺陷
空位缺陷
晶体缺陷
物理
结晶学
Atom(片上系统)
锡
格子(音乐)
材料科学
原子物理学
凝聚态物理
化学
计算机科学
声学
冶金
嵌入式系统
作者
Davide G. Sangiovanni,Björn Alling,Peter Steneteg,L. Hultman,Igor A. Abrikosov
标识
DOI:10.1103/physrevb.91.054301
摘要
We use ab initio and classical molecular dynamics (AIMD and CMD) based on the modified embedded-atom method (MEAM) potential to simulate diffusion of N vacancy and N self-interstitial point defects in $B1$ TiN. TiN MEAM parameters are optimized to obtain CMD nitrogen point-defect jump rates in agreement with AIMD predictions, as well as an excellent description of $\mathrm{Ti}{\mathrm{N}}_{x}(\ensuremath{\sim}0.7
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