Sulfurization Technique for Stabilizing Germanium Surfaces

Most surface states on germanium single crystals are quite sensitive to changes in the local environmental conditions. One of the methods of stabilization is to cover the surface with a GeS layer by the process of chemisorption and migration of sulfur atoms at elevated temperatures. A complete recipe of the sulfurizing technique is given and the results of a structural analysis of the reaction product are presented. No crystalline structure of the layer is detected for films a few microns thick.