A compact model of AlGaN/GaN on silicon Schottky diode and its application

The I-V characteristics and S-parameters of AlGaN/GaN on silicon Schottky diodes are investigated. A compact circuit model is constructed for RF application. Simulated results are compared with measured results using AlGaN/GaN on Silicon diodes as RF switches. The simulated and measured results illustrated good agreement within a wide frequency range. The output power from the switch is also measured by sweeping the input power. No suppression is observed when the highest input power equals to 14 dBm at 10 GHz for small device, which proved that the AlGaN/GaN on Silicon devices offer good potential for RF power applications.