布线(电子设计自动化)
足迹
极限(数学)
计算机科学
晶体管
空白
CMOS芯片
电子工程
电气工程
缩放比例
嵌入式系统
工程类
电压
电信
数学
几何学
生物
数学分析
认知无线电
古生物学
无线
作者
Xiang Qiu,Malgorzata Marek-Sadowska
标识
DOI:10.1145/2228360.2228560
摘要
If pin density exceeds a certain threshold, pin access becomes a challenge for inter-cell signal routing and increasing the number of metal layers cannot improve routability. CMOS and FinFET layouts may never reach this threshold, but Vertical Slit Field Effect Transistor (VeSFET) ICs may exceed it. We demonstrate that VeSFET layouts are still routable within footprint using two-sided routing which achieves better wire length and via usage than one-sided routing with or without white space inserted.
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