Nonlinear stability of quantum dot semiconductor lasers
作者
Thomas Erneux,Evgeny A. Viktorov,P. Mandel
标识
DOI:10.1109/cleoe-iqec.2007.4385980
摘要
There remain a number of critical issues involving dynamical stability properties of semiconductor lasers even though lasers with nano-structured quantum dot (QD) active layers have provided an enormous stimulus to work in this field. In QD devices, the carriers are first injected into a wetting layer before being captured by an empty dot. It has long been suspected that this capture will contribute to a larger damping rate of the relaxation oscillations. In summary, QD lasers exhibit a two-stage recovery for low intensities that increase their stability compared to QW lasers.