Ultraviolet photodetector based on p-borophene/n-ZnO heterojunction

Borophene has attracted enormous attention because of its rich and unique structural and electronic properties for promising pratical applications. Although borophene sheets have been realized on different substrates in recent experiments, there are very few reports on the device application of borophene. Recently, borophene can be grown on some functional substrates, which lays a good foundation for its potential applications. Here, we report that hydrogenated borophene can be grown on the fluorine-doped tin oxide glass substrate. The phase of the obtained borophene is well consistent with the predicted semiconducting δ5-boron sheet. Furthermore, a vertical heterojunction ultraviolet detector based p-borophene/n-zinc oxide was fabricated. The photoresponsivity of the detector is 1.02 × 10−1 A W−1, the specific detection rate was 1.43 × 109 Jones and the response speed was τres = 2.8 s, τrec = 3.2 s at the reversed bias of −5 V under the light excitation of 365 nm. This work will lay a foundation for further study on the attractive properties and applications of borophene in new optoelectronic devices and integrated circuits.