Design of RF MEMS Series Switch using Different Switch Materials to Enhance the RF Performances at DC to 40 GHz 'ze

This research article describes the design, simulation, and comparison of RF MEMS series switches by changing the switch materials to improve RF performance at up to 40 GHz using HFSS software. The RF performance (Return loss, Insertion loss, and Isolation loss) of a GaAs-based series switch (n=12) was compared to several switch materials throughout a frequency range of up to 40 GHz. The 48 samples were calculated using sample computation with a pre-test power of 80%. The series switch with GaAs switch has better RF performances (Return loss = -27.6958, Insertion loss = -0.0701) than the other switch materials of Aluminium (Return loss = -26.8112, Insertion loss = -0.1359) and Gold (Return loss = -23.1328, Insertion loss = -0.097) and Copper (Return loss = -23.927, Insertion loss = -0.3896). The optimized dimensions for maximum RF performances was Ib=265 μm, wb=95 μm, tb=1 μm for beam. Attained significance of RF performances value p¡0.OOI. The observed results indicate to have significantly higher RF performances in GaAs material than in aluminium, gold, and copper materials.