Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films

Ferroelectric memristors, as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era, have the comprehensive function of simulating brain storage and calculation. However, due to the high dielectric loss of traditional ferroelectric materials, the durability of ferroelectric memristors and Si based integration have a great challenge. Here, we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO3(BTO)-CeO2 films. The BTO-CeO2 memristors exhibit a stable resistance switching behavior at a high temperature of 100 °C due to higher Curie temperatures of BTO-CeO2 films with in-plane compressive strain. And the endurance of the device can reach the order of magnitude of 1 × 106 times. More importantly, the device has excellent functions for simulating artificial synaptic behavior, including excitatory post-synaptic current, paired-pulse facilitation, paired-pulse depression, spike-time-dependent plasticity, and short and long-term plasticity. Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model, in which recognition accuracy of digital can reach 86.78% after 20 training iterations. These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.