抗血小板
材料科学
铁磁性
凝聚态物理
硼
磁化
电介质
化学
磁场
氮化物
物理
纳米技术
光电子学
量子力学
有机化学
图层(电子)
作者
Hotaka Sakaguchi,Shinji Isogami,Makoto Niimi,Takayuki Ishibashi
标识
DOI:10.1088/1361-6463/acd9d4
摘要
Abstract Boron-induced electronic states were investigated via a combination of polar magneto-optical Kerr effect (p-MOKE) spectroscopy and spectroscopic ellipsometry for one of the antiperovskite nitrides, Mn 4 N. The boron content in the Mn 4 N film varied from 0 to 4.3 at.%, for which the crystal structure was maintained. The amplitude of p-MOKE spectra and the diagonal and off-diagonal dielectric tensors decreased with increasing boron content, which is in agreement with the magnetic properties such as magnetic anisotropy and saturation magnetization. These results were related to the lattice expansion and displacement of the charge density in the Mn 4 N by boron doping. However, the peak energy of the Lorentz oscillator in the diagonal elements of dielectric tensors suggests that a dominant inter-band transition was independent of boron content.
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