Electrical Characteristics and Analytical Modeling of GAA-Based Nanowire FeFET

The electrical characteristics of the ferroelectric field-effect transistors (FeFETs) are analyzed numerically and presented in this paper. The metal–ferroelectric–insulator–semiconductor field-effect transistor (MFISFET), among the primary structures, is taken into consideration. The nonsaturated hysteresis loop of the ferroelectric material is described by a novel analytical calculation for the relation of polarization against electric field ([Formula: see text]–[Formula: see text]. The combined impact of the nonuniform concentrations of electric field charge throughout the channel and the nonsaturated polarization of ferroelectric layers are considered to create a more realistic modeling. The proposed research work also provides an in-depth study of the electrical properties of the GAA-based Nanowire FeFET, exploring important variables including transconductance, subthreshold swing, as well as a threshold voltage. The analytical insights derived from the mathematical framework are consistent with the simulated results obtained with the ATLAS 3D simulator.