Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology

New material, process and device design innovations are proposed for next generation SiC trench MOSFET. Advanced patterning films (APF) are proposed as novel implant hardmask and high temperature capping material. Novel gate oxide formation processes are demonstrated for improved pattern fidelity & carrier mobility. A novel SiC transistor device design integrating channel counter-implant and pocket implant is proposed for significant mobility improvement without threshold voltage$(\mathrm{V}_{\mathrm{T}})$loss.