NMOS逻辑
充电泵
对偶(语法数字)
功率(物理)
控制理论(社会学)
循环(图论)
电气工程
电压
材料科学
物理
计算机科学
电容器
工程类
数学
晶体管
控制(管理)
艺术
文学类
量子力学
人工智能
组合数学
作者
Bin Lin,Pei Qin,Xiang Yi,Haoshen Zhu,Quan Xue
标识
DOI:10.1109/mape62875.2024.10813817
摘要
This paper presents a high power supply rejection (PSR) NMOS low dropout regulator (LDO) with dual-loop and charge pump. A dual-loop voltage follower that is capable of providing a high PSR through an inner fast loop and a NMOS as a power transistor. The charge pump raises the supply voltage to 1.5 times the supply voltage to power the error amplifier to ensure low dropout voltage. Post-simulation results indicate an output voltage of 896 mV with merely a 304 mV voltage dropout. The post-simulated PSR is −50 dB at 10kHz and the worst PSR of −18.7 dB at 1MHz over the full band. The undershoot/overshoot is 56 mV/12.8 mV. The total static power consumption is 756 μA.
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