Micro-Raman for Local Strain Evaluation of GaN LEDs and Si Chips Assembled on Cu Substrates

Integrated circuits are created by interfacing different materials, semiconductors, and metals, which are appropriately deposited or grown on substrates and layers soldered together. Therefore, the characteristics of starting materials and process temperatures are of great importance, as they can induce residual strains in the final assembly. Identifying and quantifying strain becomes strategically important in optimizing processes to enhance the performance, duration, and reliability of final devices. This work analyzes the thermomechanical local strain of semiconductor materials used to realize LED modules for lighting applications. Gallium Nitride active layers grown on sapphire substrates and Si chips are assembled by soldering with eutectic AuSn on copper substrates and investigated by Raman spectroscopy in a temperature range of −50 to 180 °C. From the Raman mapping of many different samples, it is concluded that one of the leading causes of strain in the GaN layer can be attributed to the differences in the thermal expansion coefficient among the various materials and, above all, among the chip, interconnection material, and substrate. These differences are responsible for forces that slightly bend the chip, causing strain in the GaN layer, which is most compressed in the central region of the chip and slightly stretched in the outer areas.