材料科学
光伏系统
兴奋剂
带隙
钙钛矿(结构)
能量转换效率
光电子学
钙钛矿太阳能电池
电容
活动层
太阳能电池
图层(电子)
纳米技术
电气工程
化学
电极
结晶学
物理化学
工程类
薄膜晶体管
作者
Mahdi Hasanzadeh Azar,Samaneh Aynehband,Habib Abdollahi,Homayoon Alimohammadi,Nooshin Rajabi,Shayan Angizi,Vahid Kamraninejad,Razieh Teimouri,Raheleh Mohammadpour,Abdolreza Simchi
出处
期刊:Photonics
[Multidisciplinary Digital Publishing Institute]
日期:2023-03-03
卷期号:10 (3): 271-271
被引量:28
标识
DOI:10.3390/photonics10030271
摘要
Recently, organic–inorganic perovskites have manifested great capacity to enhance the performance of photovoltaic systems, owing to their impressive optical and electronic properties. In this simulation survey, we employed the Solar Cell Capacitance Simulator (SCAPS-1D) to numerically analyze the effect of different hole transport layers (HTLs) (Spiro, CIS, and CsSnI3) and perovskite active layers (ALs) (FAPbI3, MAPbI3, and CsPbI3) on the solar cells’ performance with an assumed configuration of FTO/SnO2/AL/HTL/Au. The influence of layer thickness, doping density, and defect density was studied. Then, we trained a machine learning (ML) model to perform predictions on the performance metrics of the solar cells. According to the SCAPS results, CsSnI3 (as HTL) with a thickness of 220 nm, a defect density of 5 × 1017 cm−3, and a doping density of 5 × 1019 cm−3 yielded the highest power conversion efficiency (PCE) of 23.90%. In addition, a 530 nm-FAPbI3 AL with a bandgap energy of 1.51 eV and a defect density of 1014 cm−3 was more favorable than MAPbI3 (1.55 eV) and CsPbI3 (1.73 eV) to attain a PCE of >24%. ML predicted the performance matrices of the investigated solar cells with ~75% accuracy. Therefore, the FTO/SnO2/FAPbI3/CsSnI3/Au structure would be suitable for experimental studies to fabricate high-performance photovoltaic devices.
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