兴奋剂
费米能级
光电发射光谱学
掺杂剂
分析化学(期刊)
光谱学
反向光电发射光谱
基质(水族馆)
电离能
化学
轨道能级差
角分辨光电子能谱
电离
材料科学
原子物理学
电子
电子结构
X射线光电子能谱
光电子学
物理
核磁共振
离子
分子
计算化学
海洋学
有机化学
地质学
量子力学
色谱法
作者
Weiying Gao,Antoine Kahn
摘要
P-doping of zinc phthalocyanine (ZnPc) with tetrafluorotetracyanoquinodimethane (F4-TCNQ) is investigated with ultraviolet and x-ray photoemission spectroscopy, inverse photoemission spectroscopy, and in situ current–voltage (I–V) measurements. The electron affinity of F4-TCNQ (5.24 eV) is found to be equal, within experimental error, to the ionization energy of ZnPc (5.28 eV), consistent with efficient host-to-dopant electron transfer. As a result, the Fermi level in doped ZnPc drops from near midgap to 0.18 eV above the leading edge of the highest occupied molecular orbital and a narrow space-charge layer (<32 Å) is formed at the interface with the Au substrate. In situ I–V measurements show a seven orders of magnitude doping-induced increase in hole current.
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