An In situ Analysis of the Dissolution Characteristics of Half Pitch Line and Space Extreme Ultraviolet Lithography Resist Patterns

The characterization of the resist dissolution is one fundamental area of research that has been continuously investigated. This paper focuses on the preliminary work on the application the high speed atomic force microscope (HS-AFM) for the in situ dissolution analysis half-pitch (hp) lines and spaces (L/S) at standard developer concentration. In earlier works, this has been difficult but through extensive optimization and the use of carbon nano fiber-tipped cantilevers, the dissolution characterization of a 32 nm hp L/S pattern at 0.26 N aqueous tetramethylammonium hydroxide developer (standard developer concentration) was successfully achieved. Based on the results obtained using the EIDEC standard resist (ESR1) it was found that regardless of analysis condition such as resist pattern configuration (isolated or L/S pattern) and developer concentration (diluted or standard), similar dissolution characteristics in the form of resist swelling of exposed areas was observed. Moreover, further investigations using other types of model resist polymer platforms such as poly(hydroxystyrene) (PHS)-based and hybrid (PHS–methacryl)-based model resists have confirmed that dissolution behavior is not affected by the analysis conditions applied.