Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation

Abstract The low‐temperature‐processed amorphous oxide semiconductors (AOSs) exhibit remarkable potentials in large‐area, flexible, and hybrid‐integrated electronics, while the performance and stability of AOS devices highly depend on the proper manipulation of abundant native defects in AOS, especially for AOS Schottky barrier diode (SBD) with the naturally defective metal–semiconductor interface. Here, a hydrogenated‐InGaZnO SBD with a hydrogen‐rich passivation layer (PL) is reported. With the hydrogenation effectively suppressing interface defects and meanwhile donating electrons, a near‐ideal Schottky contact and more‐conductive drift region are simultaneously achieved, as proven by the perfect ideality factor of 1.08, a Schottky barrier height of 0.87 eV, a high rectification ratio ≈ 4.5 × 10 8 . Moreover, such sophisticated hydrogenation is self‐stabilized by the bilayer structure of PL, contributing to the record‐high stabilities under harsh environmental and electrical stresses.