Enhancement of photodetection based on perovskite/MoS2 hybrid thin film transistor

Perovskite/MoS 2 hybrid thin film transistor photodetectors consist of few-layered MoS 2 and CH 3 NH 3 PbI 3 film with various thickness prepared by two-step vacuum deposition. By implementing perovskite CH 3 NH 3 PbI 3 film onto the MoS 2 flake, the perovskite/MoS 2 hybrid photodetector exhibited a photoresponsivity of 10 4 A/W and fast response time of about 40 ms. Improvement of photodetection performance is attributed to the balance between light absorption in the perovskite layer and an effective transfer of photogenerated carriers from perovskite entering the MoS 2 channel. This work may provide guidance to develop high-performance hybrid structure optoelectronic devices.