氧化铟锡
电极
材料科学
铟
锡
氧化物
纳米技术
光电子学
复合材料
冶金
化学
薄膜
物理化学
作者
Jes Linnet,Jeppe Nørgaard,Hans‐Erik Kiil,Jakob Kjelstrup‐Hansen
标识
DOI:10.1002/admt.202301810
摘要
Abstract Flexible electronic devices have promising applications in many future technologies such as wearables, implantables, robotics, and displays. Among the distinct types of mechanical flexibility, stretchability stands as a significant challenge. A particularly demanding objective is the realization of a high‐performance transparent electrode that endures stretching and can be mass produced, all while avoiding additional restrictions on device density. In this work, it is demonstrated that a 3D wave patterned surface provides a threefold improved strain performance of deposited indium tin oxide electrodes, in a statistical comparison of 3D wave patterned and planar surfaces, where indium tin oxide electrodes are stretched to electrical failure. Moreover, this platform alleviates residual thin film stress, allowing for easier handling of the substrates. This study demonstrates the feasibility of attaining stretchability for upcoming electronic devices using a scalable platform that incorporates high‐performance transparent electrode materials using only conventional materials and fabrication steps.
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