Phonon mode softening and band convergence induced significant enhancement of thermoelectric performance in strained CdI2-type SnI2 monolayer

Monolayer group IVA metal halides have attracted intensive attention for their excellent thermoelectric performance. Recently, the CdI2-type SnI2 monolayer has been successfully fabricated by molecular beam epitaxy for the first time. The universal two-dimensional growth behavior on different substrates, motivates strain engineering on its thermoelectric performance. Herein, the structure stability and thermoelectric properties of SnI2 monolayer under different strains are systematically investigated, based on first-principles calculations combined with Boltzmann transport theory. The investigation shows that the tensile strain can simultaneously induce phonon mode softening and band convergence, resulting in a significant enhancement in thermoelectric performance. The phonon mode softening for ZA and optical branches further enhances lattice anharmonicity and a reduced thermal conductivity of ∼0.14 Wm−1K−1 at 300 K (∼0.05 Wm−1K−1, 800 K) can be obtained. Additionally, band convergence in valence band improves the Seebeck coefficient and increases power factor. Under +2 % tensile strain, the optimal ZT values of SnI2 monolayer for p-type doping are substantially enhanced up to 3.05 (300 K) and 5.06 (800 K), which are increased by ∼98 % and ∼50 % compared to the case without strain. Our results reveal the close relationship between the phonon mode softening and enhanced anharmonicity, and provide the physical insights into the understanding of the modulation of thermoelectric properties of monolayer SnI2, shedding light on substantially optimizing the thermoelectric performance of monolayer group IVA metal halides family.