整改
晶体管
光电子学
场效应晶体管
光学整流
太赫兹辐射
材料科学
MOSFET
电容
半导体
非线性系统
电子工程
电压
物理
电气工程
工程类
非线性光学
电极
量子力学
出处
期刊:Electronics
[Multidisciplinary Digital Publishing Institute]
日期:2024-03-25
卷期号:13 (7): 1192-1192
被引量:1
标识
DOI:10.3390/electronics13071192
摘要
Metal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the THz rectification process in the structure of an MOS transistor. The rectification depends on the nonlinear effect of the carrier dynamics. The paper shows that the so-called self-mixing effect occurs within the interface region between the source and the channel. The basic tool used numerical TCAD simulations, which offer a direct interpretation of different aspects of this interaction. The complex, 2D effect is examined in terms of its basic aspects by comparing the MOS structure with a simplified case study structure. We demonstrate that a contribution to the output-rectified voltage detectable at the drain arises from the charging of the drain well capacitance due to the diffusion of excess electrons from the self-mixing interaction occurring at the source barrier. In addition, the paper provides a quantitative description of the rectification process through the definition of the output equivalent circuit, offering a new perspective for the design of detection systems.
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