锌黄锡矿
硒
锡
材料科学
锗
太阳能电池
硫黄
图层(电子)
光电子学
捷克先令
复合材料
冶金
硅
作者
N. Messei,M.S. Aïda,Abdallah Attaf,Nadjette Hamani,S. Laznek
标识
DOI:10.15251/cl.2023.202.165
摘要
To enhance the efficiency of kesterite Cu2ZnSnS4 solar cell, different gradient strategies are investigated. Absorber layer gradient is obtained by partial substitution of sulfur with selenium or tin with germanium. The PV Parameters are calculated using the SCAPS1D program. The effect of the front, back, and double gradient on the cell parameters was investigated. We proposed also the fully graded gap absorber layer profile. The opencircuit voltage has increased to 1.040V, the fill factor has increased to 71.69%, and the efficiency has exceeded 22.95%. In contrast to other types of gradients, the short-circuit current density remains high (Jsc= 39.7mA / cm2 ).
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