ReRAM multi-level characteristics for analog computing

We were able to confirm the pulse-induced conductance change in resistive random access memory (ReRAM) with a-IGZO resistive layer and incorporated into 20×20 crossbars. The conductance was found to change from 24 to 34 mS. The conductance could be finely varied by the applied pulse. It is expected to be used for spiking neural network (SNN) synapses that require an analog conductance change due to pulses.