Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

We have studied some physical properties of GaN-based ultraviolet laser diodes. It is found that the mass of the active region has a very important effect on its photoelectric characteristics. The change of laser diode wavelength with injection current is analyzed by electroluminescence spectra of different injection currents. At the same time, the nonradiative recombination and radiative recombination of samples were analyzed by using the radiative recombination model and comparing the intensity of the yellow light peak. The results show that the quality of the active region can be improved significantly by adjusting the growth conditions during the growth process. Further, we obtained the temperature characteristics of the two samples. It is also proved that the improvement of the quality of the active region is conducive to better temperature characteristics for the device. This will be of great significance for the preparation of long-life ultraviolet laser diodes.