Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer

The introduction of an in situ C-doped GaN layer in green light-emitting diodes (LEDs) is successfully realized by optimizing the temperature of the GaN growth process. The C-doped GaN film acts as a current spreading layer for green LEDs, allowing for a more uniform current distribution and consequently an increase in luminous efficiency. At the same time, the insertion of a C-doped GaN layer does not lead to the degradation of the surface morphology as well as the crystalline quality. Electroluminescence results show that the C-doped GaN layer grown at 850°C is appropriate to be used in green LEDs.